同名作者【Jifeng Liu】论文列表 -- 中国光学期刊网

同名作者【Jifeng Liu】论文列表

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Silicon Photonics

Electrically injected GeSn lasers with peak wavelength up to 2.7 μm

Yiyin Zhou ^1,2Solomon Ojo ^1,2Chen-Wei Wu ³Yuanhao Miao ¹[ ... ]Shui-Qing Yu ^1,5,*

Author Affiliations

Abstract

¹ Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

² Microelectronics-Photonics Program, University of Arkansas, Fayetteville, Arkansas 72701, USA

³ Department of Mechanical Engineering, Taiwan Chung-Cheng University, Ming-Hsiung, Chiayi 62102, China

⁴ Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA

⁵ Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

⁶ Department of Electrical Engineering and Physics, Wilkes University, Wilkes-Barre, Pennsylvania 18766, USA

⁷ Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755, USA

⁸ School of Electrical, Energy and Computer Engineering, Arizona State University, Tempe, Arizona 85287, USA

⁹ Department of Electrical Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125, USA

¹⁰ Arktonics, LLC, Fayetteville, Arkansas 72701, USA

GeSn lasers enable the monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap material. The GeSn laser study recently moved from optical pumping into electrical injection. In this work, we present explorative investigations of GeSn heterostructure laser diodes with various layer thicknesses and material compositions. Cap layer material was studied by using

{Si}_{0.03} {Ge}_{0.89} {Sn}_{0.08}

and

{Ge}_{0.95} {Sn}_{0.05}

, and cap layer total thickness was also compared. The 190 nm SiGeSn-cap device had threshold of

0.6 kA / {cm}^{2}

at 10 K and a maximum operating temperature (

T_{\max}

) of 100 K, compared to

1.4 kA / {cm}^{2}

and 50 K from 150 nm SiGeSn-cap device, respectively. Furthermore, the 220 nm GeSn-cap device had 10 K threshold at

2.4 kA / {cm}^{2}

and

T_{\max}

at 90 K, i.e., higher threshold and lower maximal operation temperature compared to the SiGeSn cap layer, indicating that enhanced electron confinement using SiGeSn can reduce the threshold considerably. The study of the active region material showed that device gain region using

{Ge}_{0.87} {Sn}_{0.13}

had a higher threshold and lower

T_{\max}

, compared to

{Ge}_{0.89} {Sn}_{0.11}

. The performance was affected by the metal absorption, free carrier absorption, and possibly defect density level. The maximum peak wavelength was measured as 2682 nm at 90 K by using

{Ge}_{0.87} {Sn}_{0.13}

in gain regions. The investigations provide directions to the future GeSn laser diode designs toward the full integration of group-IV photonics on a Si platform.

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Photonics Research

2022, 10(1): 01000222

Efficient above-band-gap light emission in germanium

Download：689次

Jifeng Liu Xiaochen Sun Yu Bai Kenneth E. [ ... ]Jurgen Michel

Author Affiliations

Abstract

Department of Materials Science and Engineering, Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139, USAE-mail: jfliu01@mit.edu

We report an above-band-gap radiative transition in the photoluminescence spectra of single crystalline Ge in the temperature range of 20~296 K. The temperature-independence of the peak position at ~0.74 eV is remarkably different from the behavior of direct and indirect gap transitions in Ge. This transition is observed in n-type, p-type, and intrinsic single crystal Ge alike, and its intensity decreases with the increase of temperature with a small activation energy of 56 meV. Some aspects of the transition are analogous to III-V semiconductors with dilute nitrogen doping, which suggests that the origin could be related to an isoelectronic defect.

关键词半导体材料单晶锗跃迁 160.6000 Semiconductor materials 300.6280 Spectroscopy, fluorescence and luminescence 300.6470 Spectroscopy, semiconductors

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Chinese Optics Letters

2009, 7(4): 04271

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